Rhedir gan School of Computer Science and Electronic Engineering

10.000 Credyd neu 5.000 Credyd ECTS

Semester 1

Trefnydd: Dr Mohammed Mabrook

This course will focus upon advanced aspects of microelectronic and semiconductor device design. The operation of microelectronic devices during both the dc and ac behaviour will be studied. The current trends in microelectronics will be studied including the issues with scaling devices, high speed operation and manufacturing. Mathematical models will be developed to relate the fundamental physics to limitations in operation and design rules to improve performance will be studied. The module will end by providing a 'bottom-up' cell-level description of MOS based devices to complement the VLSI Design module IES2007. This will include understanding memory and imaging components and basic CMOS circuitry such as inverters.

• MOS technology and the role of SiO2. Manufacturing approaches for reducing the effects of surface states and work function differences. Frequency response of the MOS capacitor • The mode of operation of a MOSFETs. Gradual channel approximation. I-V characteristic and gm of MOSFETs. Equivalent circuits and cut-off frequency. • MOSFET scaling; different scaling methods and the development of FINFETs • MESFET, JFET, Hetero-junctions and HEMT design • Components of base current in BJTs. Design equation for frequency response. HBT transistors • Solar cells silicon and concentration PV operation and electrical performance • Basic MOS circuitry, characterisation of inverter circuits; MOS-based memory elements - EPROM; SRAM and DRAM. Charge Coupled Devices, CMOS image sensors. Active matrix displays

	threshold 40%	good 60%	excellent 70%
Understand and explain the physical processes occurring in MOS capacitors and the role of surface states and work function on the threshold voltage.Understand the high frequency response of a MOS capacitor	Can explain the microscopic processes leading to accumulation, depletion and inversion at a semiconductor surface, showing some knowledge of the energy band diagrams.	Can develop a math-ematical model of the MOS capacitor. Can explain the limitations of the model and the frequency related effects seen in MOS capacitors.	Given guidance can derive an expression for the C-V characteristic of an MOS capacitor and can apply it. Can evaluate effect of surface states on the flat-band voltage.
Understand the issues with scaling transistor geometries and advanced device operation such as FINFETs, HEMTs, JFETs and BJTs	Given guidance, can derive the DC characteristic of a MOSFET. Can derive a cut-off frequency from the equivalent circuit. Understand how HEMTs work. Undeerstand the need for FINFET	Can distinguish between a JFET, MESFET and MOSFET. Can explain the basic operation of the devices. Can draw the equivalent circuits and explain physical origin of components.	Can explain the concepts of saturation and pinch-off. Can derive and use relevant equations to design MOSFETs and calculate cut-off frequencies. Can describe operation of FINFETs in detail
Understand the operation of a silicon-based solar cell	Understand the main physical steps needed for photocurrent generation. Some understanding of design, characterisation and overall operation.	Can apply a detailed explanation for photocurrent generation. has a limited understanding of real effects upon solar cell output and characterisation.	Can explain in detail the process of MOSFET fabrication. Can explain in detail the how real effects (temperature, shunt, series resistance etc) can impact upon solar cell output. Understands the need and operation of CPV
Know the various devices based on the MOS structures.	Can identify the various members of the MOS family and can outline their mode of operation	Can discuss in detail the operation of the devices. Will have a basic understanding of the pros and cons of the various inverter circuits.	Can discuss in detail the various devices and their implementation in silicon. Will know general areas of application.

Math	Enw	Disgrifiad	Pwysau
ARHOLIAD	Examination	Final exam	80.00
PRAWF DOSBARTH	In class test 1	Class test	10.00
PRAWF DOSBARTH	Assignment (In lieu of class test 2)	Class test	10.00

		Oriau
Lecture	2 x 1 hour lectures over 12 weeks 4 tutorials delivered in lecture slots	24
Private study		76

• Rhifedd - Medrusrwydd wrth ddefnyddio rhifau ar lefelau priodol o gywirdeb
• Hunanreolaeth - Gallu gweithio mewn ffordd effeithlon, prydlon a threfnus. Gallu edrych ar ganlyniadau tasgau a digwyddiadau, a barnu lefelau o ansawdd a phwysigrwydd
• Adalw gwybodaeth - Gallu mynd at wahanol ac amrywiol ffynonellau gwybodaeth
• Dadansoddi Beirniadol & Datrys Problem - Gallu dadelfennu a dadansoddi problemau neu sefyllfaoedd cymhleth. Gallu canfod atebion i broblemau drwy ddadansoddiadau ac archwilio posibiliadau

• Apply underpinning concepts and ideas of engineering;
• Formulate and analyse requirements and practical constraints of products, processes and services, place them in an engineering context and manage their implementation;
• Demonstrate an awareness of current advances and contemporary approaches in the discipline and have strategies for keeping that awareness current;

Gorfodol mewn cyrsiau:

• H610: BENG Electronic Engineering (3 yrs) year 3 (BENG/ELE)
• H62B: BEng Electronic Engineering (4yr with Incorp Foundation) year 3 (BENG/ELE1)
• H61F: BEng Electronic Engineering year 3 (BENG/ELEF)
• H621: BEng Electronic Engineering with International Experience year 4 (BENG/ELEIE)
• H601: MEng Electronic Engineering (4 yrs) year 3 (MENG/EE)
• H618: MEng Electronic Engineering with International Experience year 4 (MENG/EEIE)
• H60P: MEng Electronic Engineering with Industrial Placement year 3 (MENG/EEP)